| dc.contributor.author | Efros, Al. L. | |
| dc.contributor.author | Rashba, Emmanuel | |
| dc.contributor.author | Rosen, Matthew Scot | |
| dc.date.accessioned | 2016-03-15T15:49:39Z | |
| dc.date.issued | 2001 | |
| dc.identifier | Quick submit: 2016-01-28T21:09:00-05:00 | |
| dc.identifier.citation | Efros, Al. L., E. I. Rashba, and M. Rosen. 2001. “Paramagnetic Ion-Doped Nanocrystal as a Voltage-Controlled Spin Filter.” Physical Review Letters 87 (20) (October 29). doi:10.1103/physrevlett.87.206601. | en_US |
| dc.identifier.issn | 0031-9007 | en_US |
| dc.identifier.uri | http://nrs.harvard.edu/urn-3:HUL.InstRepos:25876265 | |
| dc.description.abstract | A theory of spin injection from a ferromagnetic source into a semiconductor through a paramagnetic ion-doped nanocrystal is developed. Spin-polarized current from the source polarizes the ion; the polarized ion, in turn, controls the spin polarization of the current flowing through the nanocrystal. Depending on voltage, the ion can either enhance the injection coefficient by several times or suppress it. Large ion spins produce stronger enhancement of spin injection. | en_US |
| dc.description.sponsorship | Physics | en_US |
| dc.language.iso | en_US | en_US |
| dc.publisher | American Physical Society (APS) | en_US |
| dc.relation.isversionof | doi:10.1103/physrevlett.87.206601 | en_US |
| dash.license | LAA | |
| dc.title | Paramagnetic Ion-Doped Nanocrystal as a Voltage-Controlled Spin Filter | en_US |
| dc.type | Journal Article | en_US |
| dc.date.updated | 2016-01-29T02:09:00Z | |
| dc.description.version | Version of Record | en_US |
| dc.rights.holder | Al. L. Efros, E. I. Rashba and M. Rosen1 | |
| dc.relation.journal | Phys. Rev. Lett. | en_US |
| dash.depositing.author | Rashba, Emmanuel | |
| dc.date.available | 2016-03-15T15:49:39Z | |
| dc.identifier.doi | 10.1103/physrevlett.87.206601 | * |
| dash.contributor.affiliated | Rosen, Matthew | |
| dash.contributor.affiliated | Rashba, Emmanuel | |
