Spin injection into a ballistic semiconductor microstructure

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Spin injection into a ballistic semiconductor microstructure

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Title: Spin injection into a ballistic semiconductor microstructure
Author: Kravchenko, Vladimir Ya.; Rashba, Emmanuel

Note: Order does not necessarily reflect citation order of authors.

Citation: Kravchenko, Vladimir Ya., and Emmanuel I. Rashba. 2003. “Spin Injection into a Ballistic Semiconductor Microstructure.” Physical Review B 67 (12) (March 31). doi:10.1103/physrevb.67.121310.
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Abstract: A theory of spin injection across a ballistic ferromagnet-semiconductor-ferromagnet junction is developed for the Boltzmann regime. Spin injection coefficient γ is suppressed by the Sharvin resistance of the semiconductor r∗N=(h/e2)(π2/SN), where SN is the Fermi-surface cross-section. It competes with the diffusion resistances of the ferromagnets rF, and γ∼rF/r∗N≪1 in the absence of contact barriers. Efficient spin injection can be ensured by contact barriers. Explicit formulae for the junction resistance and the spin-valve effect are presented.
Published Version: doi:10.1103/physrevb.67.121310
Other Sources: http://arxiv.org/pdf/cond-mat/0209539v2.pdf
Terms of Use: This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:25884368
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