Inelastic scattering approach to the theory of a magnetic tunnel transistor source
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CitationRashba, Emmanuel I. 2003. “Inelastic Scattering Approach to the Theory of a Magnetic Tunnel Transistor Source.” Physical Review B 68 (24) (December 23). doi:10.1103/physrevb.68.241310.
AbstractThe high efficiency of a magnetic tunnel transistor as a source of spin-polarized electrons has been proven recently [X. Jiang et al., Phys. Rev. Lett. 90, 256603 (2003)]. A concept of this device based on an active group of hot electrons controlling the collector current and experiencing predominantly inelastic scattering in the base is developed. It takes into account the connection between the injection and filtering of spin-polarized electrons inside the device. Explicit expressions for the parameters of the device in terms of the basic parameters of the system are presented.
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