Carbon Nanotube-Based Nonvolatile Random Access Memory for Molecular Computing
Access StatusFull text of the requested work is not available in DASH at this time ("dark deposit"). For more information on dark deposits, see our FAQ.
Tseng, Greg Y.
Cheung, Chin Li
MetadataShow full item record
CitationRueckes, Thomas, Kyoungha Kim, Ernesto Joselevich, Greg Y. Tseng, Chin-Li Cheung, and Charles M. Lieber. 2000. Science. 289(5476): 94-97.
AbstractA concept for molecular electronics exploiting carbon nanotubes as both molecular device elements and molecular wires for reading and writing information was developed. Each device element is based on a suspended, crossed nanotube geometry that leads to bistable, electrostatically
switchable ON/OFF states. The device elements are naturally addressable in large arrays by the carbon nanotube molecular
wires making up the devices. These reversible, bistable device elements could be used to construct nonvolatile random access memory and logic function tables at an integration level approaching 10 [to the 12th power] elements per square centimeter and an element operation frequency in excess
of 100 gigahertz. The viability of this concept is demonstrated by detailed calculations and by the experimental realization of a reversible, bistable
Citable link to this pagehttp://nrs.harvard.edu/urn-3:HUL.InstRepos:2710485
- FAS Scholarly Articles