Ultra-low threshold gallium nitride photonic crystal nanobeam laser

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Ultra-low threshold gallium nitride photonic crystal nanobeam laser

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Title: Ultra-low threshold gallium nitride photonic crystal nanobeam laser
Author: Niu, Nan; Woolf, Alexander J; Wang, Danqing; Zhu, Tongtong; Quan, Qimin; Oliver, Rachel; Hu, Evelyn

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Citation: Niu, Nan, Alexander Woolf, Danqing Wang, Tongtong Zhu, Qimin Quan, Rachel A. Oliver, and Evelyn L. Hu. 2015. “Ultra-Low Threshold Gallium Nitride Photonic Crystal Nanobeam Laser.” Applied Physics Letters 106 (23) (June 8): 231104. Portico. doi:10.1063/1.4922211.
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Abstract: We report exceptionally low thresholds (9.1 μJ/cm2) for room temperature lasing at ∼450 nm in optically pumped Gallium Nitride (GaN) nanobeam cavity structures. The nanobeam cavity geometry provides high theoretical Q (>100 000) with small modal volume, leading to a high spontaneous emission factor, β = 0.94. The active layer materials are Indium Gallium Nitride (InGaN) fragmented quantum wells (fQWs), a critical factor in achieving the low thresholds, which are an order-of-magnitude lower than obtainable with continuous QW active layers. We suggest that the extra confinement of photo-generated carriers for fQWs (compared to QWs) is responsible for the excellent performance.
Published Version: doi:10.1063/1.4922211
Terms of Use: This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:27727028
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