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dc.contributor.authorShin, Byungha
dc.contributor.authorAziz, Michael
dc.date.accessioned2009-04-14T17:56:04Z
dc.date.issued2007
dc.identifier.citationShin, Byungha and Michael J. Aziz. 2007. Kinetic energy induced smoothening and delay of epitaxial breakdown in pulsed laser deposition. Physical Review B 76(8): 085431.en
dc.identifier.issn1098-0121en
dc.identifier.urihttp://nrs.harvard.edu/urn-3:HUL.InstRepos:2795319
dc.description.abstractWe have isolated the effect of kinetic energy of depositing species from the effect of flux pulsing during pulsed-laser deposition (PLD) on surface morphology evolution of Ge(001) homoepitaxy at low temperature (100 degrees C). Using a dual molecular beam epitaxy (MBE) PLD chamber, we compare morphology evolution from three different growth methods under identical experimental conditions except for the differing nature of the depositing flux: (a) PLD with average kinetic energy 300 eV (PLD-KE); (b) PLD with suppressed kinetic energy comparable to thermal evaporation energy (PLD-TH); and (c) MBE. The thicknesses at which epitaxial breakdown occurs are ranked in the order PLD-KE>MBE>PLD-TH; additionally, the surface is smoother in PLD-KE than in MBE. The surface roughness of the films grown by PLD-TH cannot be compared due to the early epitaxial breakdown. These results demonstrate convincingly that kinetic energy is more important than flux pulsing in the enhancement of epitaxial growth, i.e., the reduction in roughness and the delay of epitaxial breakdown.en
dc.description.sponsorshipEngineering and Applied Sciencesen
dc.language.isoen_USen
dc.publisherThe American Physical Societyen
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevB.76.085431en
dash.licenseLAA
dc.subjectelectron correlationsen
dc.subjectquantum dotsen
dc.subjectWigner crystalen
dc.subjectMonte Carlo methodsen
dc.subjectelectron gasen
dc.titleKinetic Energy Induced Smoothening and Delay of Epitaxial Breakdown in Pulsed-laser Depositionen
dc.relation.journalPhysical Review Ben
dash.depositing.authorAziz, Michael
dc.identifier.doi10.1103/PhysRevB.76.085431*
dash.contributor.affiliatedAziz, Michael


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