Activation Volume for Phosphorus Diffusion in Silicon and Si0.93Ge0.07
Access StatusFull text of the requested work is not available in DASH at this time ("dark deposit"). For more information on dark deposits, see our FAQ.
Zangenberg, Nikolaj R.
Larsen, Arne Nylandsted
MetadataShow full item record
CitationZhao, Yuechao, Michael J. Aziz, Nikolaj R. Zangenberg, and Arne Nylandsted Larsen. 2005. Activation Volume for phosphorus diffusion in silicon and Si0.93Ge0.07. Applied Physics Letters 86(14): 141902.
AbstractThe hydrostatic pressure dependence of the diffusivity of P in compressively strained Si0.93Ge0.07 and unalloyed Si has been measured. In both cases the diffusivity is almost independent of pressure, characterized by an activation volume V* of (+0.09±0.11) times the atomic volume Omega for the unalloyed Si, and (+0.01±0.06) Omega for Si0.93Ge0.07. The results are used in conjunction with the reported effect of biaxial strain on diffusion normal to the surface to test the prediction for an interstitialcy-based mechanism of Aziz's phenomenological thermodynamic treatment of diffusion under uniform nonhydrostatic stress states. The prediction agrees well with measured behavior, lending additional credence to the interstitial-based mechanism and supporting the nonhydrostatic thermodynamic treatment.
Citable link to this pagehttp://nrs.harvard.edu/urn-3:HUL.InstRepos:2795321
- FAS Scholarly Articles