Activation Volume for Phosphorus Diffusion in Silicon and Si0.93Ge0.07

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Activation Volume for Phosphorus Diffusion in Silicon and Si0.93Ge0.07

Show simple item record Larsen, Arne Nylandsted Zhao, Yuechao Zangenberg, Nikolaj R. Aziz, Michael 2009-04-14T19:23:58Z 2005
dc.identifier.citation Zhao, Yuechao, Michael J. Aziz, Nikolaj R. Zangenberg, and Arne Nylandsted Larsen. 2005. Activation Volume for phosphorus diffusion in silicon and Si0.93Ge0.07. Applied Physics Letters 86(14): 141902. en
dc.identifier.issn 0003-6951 en
dc.description.abstract The hydrostatic pressure dependence of the diffusivity of P in compressively strained Si<sub>0.93</sub>Ge<sub>0.07</sub> and unalloyed Si has been measured. In both cases the diffusivity is almost independent of pressure, characterized by an activation volume V* of (+0.09±0.11) times the atomic volume Omega for the unalloyed Si, and (+0.01±0.06) Omega for Si<sub>0.93</sub>Ge<sub>0.07</sub>. The results are used in conjunction with the reported effect of biaxial strain on diffusion normal to the surface to test the prediction for an interstitialcy-based mechanism of Aziz's phenomenological thermodynamic treatment of diffusion under uniform nonhydrostatic stress states. The prediction agrees well with measured behavior, lending additional credence to the interstitial-based mechanism and supporting the nonhydrostatic thermodynamic treatment. en
dc.description.sponsorship Engineering and Applied Sciences en
dc.language.iso en_US en
dc.publisher American Institute of Physics en
dc.relation.isversionof en
dash.license META_ONLY
dc.title Activation Volume for Phosphorus Diffusion in Silicon and Si0.93Ge0.07 en
dc.relation.journal Applied Physics Letters en Aziz, Michael
dash.embargo.until 10000-01-01

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