Three-dimensional Morphology Evolution of SiO2 Patterned Films Under MeV Ion Irradiation

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Three-dimensional Morphology Evolution of SiO2 Patterned Films Under MeV Ion Irradiation

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Title: Three-dimensional Morphology Evolution of SiO2 Patterned Films Under MeV Ion Irradiation
Author: Chen, Xi; Aziz, Michael; Hutchinson, John; Otani, Kan; Chervinsky, John F.

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Citation: Otani, Kan, Xi Chen, John W. Hutchinson, John F. Chervinsky, and Michael J. Aziz. 2006. Three-dimensional morphology evolution of SiO2 patterned films under MeV ion irradiation. Journal of Applied Physics 100(2): 023535.
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Abstract: We have measured the evolving three-dimensional (3D) morphology of patterned SiO2 stripes on Si substrates induced by 3 MeV O++ ion irradiation. We develop a 3D constitutive relation to describe anisotropic deformation, densification, and flow. We use this constitutive relation in a finite element model that simulates the experimental morphology evolution, and we find excellent agreement between simulated and measured profiles. The model should be useful in predicting morphology evolution in complex three-dimensional structures under MeV ion irradiation.
Published Version: http://dx.doi.org/10.1063/1.2215269
Other Sources: http://www.seas.harvard.edu/matsci/people/aziz/publications/mja168.pdf
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:2795731
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