Three-dimensional Morphology Evolution of SiO2 Patterned Films Under MeV Ion Irradiation
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CitationOtani, Kan, Xi Chen, John W. Hutchinson, John F. Chervinsky, and Michael J. Aziz. 2006. Three-dimensional morphology evolution of SiO2 patterned films under MeV ion irradiation. Journal of Applied Physics 100(2): 023535.
AbstractWe have measured the evolving three-dimensional (3D) morphology of patterned SiO2 stripes on Si substrates induced by 3 MeV O++ ion irradiation. We develop a 3D constitutive relation to describe anisotropic deformation, densiﬁcation, and ﬂow. We use this constitutive relation in a ﬁnite element model that simulates the experimental morphology evolution, and we ﬁnd excellent agreement between simulated and measured proﬁles. The model should be useful in predicting morphology evolution in complex three-dimensional structures under MeV ion irradiation.
Citable link to this pagehttp://nrs.harvard.edu/urn-3:HUL.InstRepos:2795731
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