Solute Trapping of Group III, IV, and V Elements in Silicon by an Aperiodic Stepwise Growth Mechanism
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Solute Trapping of Group III, IV, and V Elements in Silicon by an Aperiodic Stepwise Growth Mechanism
| Title: | Solute Trapping of Group III, IV, and V Elements in Silicon by an Aperiodic Stepwise Growth Mechanism |
| Author: |
Reitano, Riccardo; Aziz, Michael; Smith, Patrick M.
Note: Order does not necessarily reflect citation order of authors. |
| Citation: | Reitano, Riccardo, Patrick M. Smith, and Michael J. Aziz. 1994. Solute Trapping of Group III, IV, and V Elements in Silicon by an Aperiodic Stepwise Growth Mechanism 76, no. 3: 1518-1529. |
| Full Text & Related Files: |
Reitano_solutetrapping.pdf (2.520Mb; PDF) 
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| Abstract: | With rapid solidification following pulsed laser melting, we have measured the dependence on
interface orientation of the amount of solute trapping of several group III, IV, and V elements (As, Ga, Ge, In, Sb, Sn) in Si. The aperiodic stepwise growth model of Goldman and Aziz accurately fits both the velocity and orientation dependence of solute trapping of all of these solutes except Ge. The success of the model implies a ledge structure for the crystal/melt interface and a step-flow mechanism for growth from the melt. In addition, we have observed an empirical inverse correlation between the two free parameters (-“diffusive speeds”) in this model and the equilibrium solute partition coefficient of a system. This correlation may be used to estimate values of these free parameters for other systems in which solute trapping has not or cannot be measured. The possible microscopic origin of such a correlation is discussed. |
| Published Version: | http://dx.doi.org/10.1063/1.357728 |
| Other Sources: | http://www.seas.harvard.edu/matsci/people/aziz/publications/mja075.pdf |
| Terms of Use: | This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA |
| Citable link to this page: | http://nrs.harvard.edu/urn-3:HUL.InstRepos:2796944 |
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