Solute Trapping of Group III, IV, and V Elements in Silicon by an Aperiodic Stepwise Growth Mechanism
Smith, Patrick M.
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CitationReitano, Riccardo, Patrick M. Smith, and Michael J. Aziz. 1994. Solute Trapping of Group III, IV, and V Elements in Silicon by an Aperiodic Stepwise Growth Mechanism 76, no. 3: 1518-1529.
AbstractWith rapid solidification following pulsed laser melting, we have measured the dependence on
interface orientation of the amount of solute trapping of several group III, IV, and V elements (As,
Ga, Ge, In, Sb, Sn) in Si. The aperiodic stepwise growth model of Goldman and Aziz accurately fits
both the velocity and orientation dependence of solute trapping of all of these solutes except Ge. The
success of the model implies a ledge structure for the crystal/melt interface and a step-flow
mechanism for growth from the melt. In addition, we have observed an empirical inverse correlation
between the two free parameters (-“diffusive speeds”) in this model and the equilibrium solute
partition coefficient of a system. This correlation may be used to estimate values of these free
parameters for other systems in which solute trapping has not or cannot be measured. The possible
microscopic origin of such a correlation is discussed.
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