Doping by Metal-Mediated Epitaxy: Growth of As Delta-Doped Si through a Pb Monolayer
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Dubon, Oscar D.
Evans, Paul G.
Chervinsky, John F.
Chisholm, Matthew F.
Muller, David A.
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CitationDubon, Oscar D., Paul G. Evans, John F. Chervinsky, Michael J. Aziz, Frans A. Spaepen, Jene A. Golovchenko, Matthew F. Chisholm, and David A. Muller. 2001. Doping by metal-mediated epitaxy: Growth of As delta-doped Si through a Pb monolayer. Applied Physics Letters 78(11): 1505-1507.
AbstractIn molecular-beam epitaxy a monolayer of Pb on the Si(111) surface induces single-crystal growth at temperatures well below those required for similar growth on a bare surface. We demonstrate that the suppression of dopant segregation at the lower temperatures attainable by Pb-mediated growth allows the incorporation of As donors at concentrations reaching a few atomic percent. When Pb and Si are deposited on an As-terminated Si(111) substrate at 350 °C, the Pb segregates to the surface without doping the Si film while the As is buried within nanometers of the substrate–film interface. The resulting concentration of electrically active As, 1.8×1021cm–3, represents the highest concentration of As donors achieved by any delta-doping or thin-film deposition method.
Citable link to this pagehttp://nrs.harvard.edu/urn-3:HUL.InstRepos:2796981
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