Interfacial Roughening During Solid Phase Epitaxy: Interaction of Dopant, Stress, and Anisotropy Effects
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Gray, Leonard J.
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CitationBarvosa-Carter, William, Michael J. Aziz, Anh-Vu Phan, Ted Kaplan, and Leonard J. Gray. 2004. Interfacial roughening during solid phase epitaxy: Interaction of dopant, stress, and anisotropy effects. Journal of Applied Physics 96(10): 5462-5468.
AbstractThe effects of externally applied stress and rate-enhancing dopants on interfacial roughness during the solid phase epitaxial growth of ion-implantation-doped Si are investigated using cross-sectional transmission electron microscopy and time-resolved reflectivity. We find long-wavelength roughness in the absence of an applied stress that arises solely from the dopant-gradient. With the addition of a compressive stress, the interface roughens further with an enhanced magnitude and a dramatically reduced wavelength. We discuss the experimental results in the context of a simulation that includes our current understanding of stress, dopant-gradient, and interface anisotropy effects. We find a rich interplay between these effects in determining growth morphology evolution, and demonstrate the successes and current limitations of the model.
Citable link to this pagehttp://nrs.harvard.edu/urn-3:HUL.InstRepos:2797240
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