Interfacial Roughening During Solid Phase Epitaxy: Interaction of Dopant, Stress, and Anisotropy Effects

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Interfacial Roughening During Solid Phase Epitaxy: Interaction of Dopant, Stress, and Anisotropy Effects

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Title: Interfacial Roughening During Solid Phase Epitaxy: Interaction of Dopant, Stress, and Anisotropy Effects
Author: Gray, Leonard J.; Barvosa-Carter, William; Phan, Anh-Vu; Kaplan, Ted; Aziz, Michael

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Citation: Barvosa-Carter, William, Michael J. Aziz, Anh-Vu Phan, Ted Kaplan, and Leonard J. Gray. 2004. Interfacial roughening during solid phase epitaxy: Interaction of dopant, stress, and anisotropy effects. Journal of Applied Physics 96(10): 5462-5468.
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Abstract: The effects of externally applied stress and rate-enhancing dopants on interfacial roughness during the solid phase epitaxial growth of ion-implantation-doped Si are investigated using cross-sectional transmission electron microscopy and time-resolved reflectivity. We find long-wavelength roughness in the absence of an applied stress that arises solely from the dopant-gradient. With the addition of a compressive stress, the interface roughens further with an enhanced magnitude and a dramatically reduced wavelength. We discuss the experimental results in the context of a simulation that includes our current understanding of stress, dopant-gradient, and interface anisotropy effects. We find a rich interplay between these effects in determining growth morphology evolution, and demonstrate the successes and current limitations of the model.
Published Version: http://dx.doi.org/10.1063/1.1790580
Other Sources: http://www.seas.harvard.edu/matsci/people/aziz/publications/mja151.pdf
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:2797240
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