Model for Dopant and Impurity Segregation During Vapor Phase Growth.
CitationArnold, Craig B., and Michael J. Aziz. 2000. Model for Dopant and Impurity Segregation During Vapor Phase Growth. Materials Research Society Symposium Proceedings 648 (Fall 2000), P3.11.1-7.
AbstractWe propose a new kinetic model for surface segregation during vapor phase growth that
takes into account multiple mechanisms for segregation, including mechanisms for inter-layer exchange and surface diffusion. The resulting behavior of the segregation length shows temperature and velocity dependence, both of which have been observed in experiments. We compare our analytic model to experimental measurements for segregation of Phosphorus in Si(001), and we find an excellent agreement using realistic energies and pre-exponential factors for kinetic rate constants.
Citable link to this pagehttp://nrs.harvard.edu/urn-3:HUL.InstRepos:2797443
- FAS Scholarly Articles