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dc.contributor.authorAziz, Michael
dc.date.accessioned2009-04-21T03:13:07Z
dc.date.issued2001
dc.identifier.citationAziz, Michael J. 2001. Stress effects on defects and dopant diffusion in Si. Materials Science in Semiconductor Processing 4, (5): 397-403.en
dc.identifier.issn1369-8001en
dc.identifier.urihttp://nrs.harvard.edu/urn-3:HUL.InstRepos:2797446
dc.description.abstractThe effects of stress on equilibrium point defect populations and on dopant diffusion for single crystals free of extended defects are reviewed. The thermodynamic relationships presented permit the direct comparison of hydrostatic and biaxial stress experiments and of atomistic calculations under hydrostatic and nonhydrostatic stress for any proposed mechanism. Experiments on the effects of pressure and stress on the diffusivity are reviewed. For Sb in Si, using as input the measured effect of hydrostatic pressure on diffusion and the assumption of a pure vacancy mechanism, the measured effect of biaxial stress on diffusion can be predicted successfully with no free parameters. For B in Si, an apparent discrepancy between the hydrostatic and biaxial stress effects exists assuming a pure interstitial-based mechanism, The requirements to permit the prediction of the effect of an arbitrary stress state on diffusion in an arbitrary direction are discussed.en
dc.description.sponsorshipEngineering and Applied Sciencesen
dc.language.isoen_USen
dc.publisherElsevieren
dc.relation.isversionofhttp://dx.doi.org/10.1016/S1369-8001(01)00014-2en
dc.relation.hasversionhttp://www.seas.harvard.edu/matsci/people/aziz/publications/mja120.pdfen
dash.licenseLAA
dc.subjectstrains & stressesen
dc.subjectactivation volumeen
dc.subjectdiffusionen
dc.subjectpoint defecten
dc.subjectstrained filmsen
dc.subjectsiliconen
dc.titleStress Effects on Defects and Dopant Diffusion in Sien
dc.relation.journalMaterials Science in Semiconductor Processingen
dash.depositing.authorAziz, Michael
dc.identifier.doi10.1016/S1369-8001(01)00014-2*
dash.contributor.affiliatedAziz, Michael


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