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dc.contributor.authorAziz, Michael
dc.date.accessioned2009-04-21T03:29:31Z
dc.date.issued1998
dc.identifier.citationAziz, Michael J., Pressure and Stress Effects on Diffusion in Si. Defect and Diffusion Forum, Vols. 153-155, pp 1-10. 1998. Trans Tech Publications.en
dc.identifier.urihttp://nrs.harvard.edu/urn-3:HUL.InstRepos:2797450
dc.description.abstractThe thermodynamics of diffusion under hydrostatic pressure and nonhydrostatic stress is presented for single crystals free of extended defects. The thermodynamic relationships obtained permit the direct comparison of hydrostatic and biaxial stress experiments and of atomistic calculations under hydrostatic stress for any proposed mechanism. Atomistic calculations of the volume changes upon point defect formation and migration, and experiments on the effects of pressure and stress on the diffusivity, are reviewed. For Sb in Si, using as input the results of ab initio calculations of effect of hydrostatic pressure on diffusion by the vacancy mechanism, the thermodynamic relationships successfully account for the measured effect biaxial stress on diffusion with no free parameters. For other cases, missing parameters are enumerated and experimental and calculational procedures outlined.en
dc.description.sponsorshipEngineering and Applied Sciencesen
dc.language.isoen_USen
dc.publisherTrans Tech Publicationsen
dc.relation.isversionofhttp://dx.doi.org/10.4028/www.scientific.net%2FDDF.153-155.1en
dash.licenseLAA
dc.subjectnonhydrostatic stressen
dc.subjectdiffusion mechanismen
dc.subjectdopant diffusionen
dc.subjectself diffusionen
dc.subjectbiaxial stressen
dc.subjectthermodynamicsen
dc.titlePressure and Stress Effects on Diffusion in Sien
dc.relation.journalDefect and Diffusion Forumen
dash.depositing.authorAziz, Michael
dc.identifier.doi10.4028/www.scientific.net%2FDDF.153-155.1*
dash.contributor.affiliatedAziz, Michael


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