Modelling a Growth Instability in a Stressed Solid

DSpace/Manakin Repository

Modelling a Growth Instability in a Stressed Solid

Citable link to this page


Title: Modelling a Growth Instability in a Stressed Solid
Author: Barvosa-Carter, William; Kaplan, Theodore; Aziz, Michael; Sethian, James A.; Adalsteinsson, David; Gray, Leonard J.; Phan, Anh-Vu

Note: Order does not necessarily reflect citation order of authors.

Citation: Phan, Anh-Vhu, Theodore Kaplan, Leonard J. Gray, David Adalsteinsson, James A. Sethian, William Barvosa-Carter, and Michael J. Aziz. 2001. Modeling a Growth Instability in a Stressed Solid. Modelling and Simulation in Materials Science and Engineering 9(4): 309-325.
Access Status: Full text of the requested work is not available in DASH at this time (“dark deposit”). For more information on dark deposits, see our FAQ.
Full Text & Related Files:
Abstract: The growth of crystalline silicon from the amorphous phase in the presence of an applied stress is modelled using advanced numerical methods. The crystal region is modelled as a linear elastic solid and the amorphous as a viscous fluid with a time-dependent viscosity to reflect structural relaxation. Appropriate
coupling conditions across the boundary are defined, and both problems are
solved using a symmetric-Galerkin boundary integral method. The interface is
advanced in time using the level set technique. The results match well with
experiments and support the proposed kinetic mechanism for the observed
interface growth instability.
Published Version:
Other Sources:
Citable link to this page:
Downloads of this work:

Show full Dublin Core record

This item appears in the following Collection(s)


Search DASH

Advanced Search