Modelling a Growth Instability in a Stressed Solid
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Gray, Leonard J.
Sethian, James A.
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CitationPhan, Anh-Vhu, Theodore Kaplan, Leonard J. Gray, David Adalsteinsson, James A. Sethian, William Barvosa-Carter, and Michael J. Aziz. 2001. Modeling a Growth Instability in a Stressed Solid. Modelling and Simulation in Materials Science and Engineering 9(4): 309-325.
AbstractThe growth of crystalline silicon from the amorphous phase in the presence of an applied stress is modelled using advanced numerical methods. The crystal region is modelled as a linear elastic solid and the amorphous as a viscous fluid with a time-dependent viscosity to reflect structural relaxation. Appropriate
coupling conditions across the boundary are defined, and both problems are
solved using a symmetric-Galerkin boundary integral method. The interface is
advanced in time using the level set technique. The results match well with
experiments and support the proposed kinetic mechanism for the observed
interface growth instability.
Citable link to this pagehttp://nrs.harvard.edu/urn-3:HUL.InstRepos:2797456
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