Synthesis of GaNxAs1-x thin films by pulsed laser melting and rapid thermal annealing of N+-implanted GaAs
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Scarpulla, Michael A.
Dubon, Oscar D., Jr.
Yu, Kin Man
Pillai, Manoj R.
J. W., BeemanNote: Order does not necessarily reflect citation order of authors.
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CitationYu, Kin Man, Wladek Walukiewicz, Michael A. Scarpulla, Oscar D. Dubon, Jr., Jay Wu, Jacek Jasinski, Zuzanna Liliental-Weber, J. W. Beeman, Manoj R. Pillai, and Michael J. Aziz. Synthesis of GaN x As 1-x thin films by pulsed laser melting and rapid thermal annealing of N +-implanted GaAs. 2003. Journal of Applied Physics 94(2): 1043-1049.
AbstractWe present a systematic investigation on the formation of the highly mismatched alloy GaNxAs1–x using N+-implantation followed by a combination of pulsed laser melting and rapid thermal annealing. Thin films of GaNxAs1–x with x as high as 0.016 and an activation efficiency of the implanted N up to 50% have been synthesized with structural and optical properties comparable to films grown by epitaxial deposition techniques with similar substitutional N content. The effects of N+ implantation dose, laser energy fluence, and rapid thermal annealing temperature on the N incorporation as well as optical and structural properties of the GaNxAs1–x films are discussed.
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