dc.contributor.author | Liliental-Weber, Zuzanna | |
dc.contributor.author | Scarpulla, Michael A. | |
dc.contributor.author | Dubon, Oscar D., Jr. | |
dc.contributor.author | Jasinski, Jacek | |
dc.contributor.author | Yu, Kin Man | |
dc.contributor.author | Wu, Jay | |
dc.contributor.author | Pillai, Manoj R. | |
dc.contributor.author | Aziz, Michael | |
dc.contributor.author | Walukiewicz, Wladek | |
dc.contributor.author | J. W., Beeman | |
dc.date.accessioned | 2009-04-21T14:27:15Z | |
dc.date.issued | 2003 | |
dc.identifier.citation | Yu, Kin Man, Wladek Walukiewicz, Michael A. Scarpulla, Oscar D. Dubon, Jr., Jay Wu, Jacek Jasinski, Zuzanna Liliental-Weber, J. W. Beeman, Manoj R. Pillai, and Michael J. Aziz. Synthesis of GaN x As 1-x thin films by pulsed laser melting and rapid thermal annealing of N +-implanted GaAs. 2003. Journal of Applied Physics 94(2): 1043-1049. | en |
dc.identifier.issn | 1089-7550 | en |
dc.identifier.issn | 0021-8979 | en |
dc.identifier.uri | http://nrs.harvard.edu/urn-3:HUL.InstRepos:2797690 | |
dc.description.abstract | We present a systematic investigation on the formation of the highly mismatched alloy GaN<sub>x</sub>As<sub>1–x</sub> using N<sup>+</sup>-implantation followed by a combination of pulsed laser melting and rapid thermal annealing. Thin films of GaN<sub>x</sub>As<sub>1–x</sub> with x as high as 0.016 and an activation efficiency of the implanted N up to 50% have been synthesized with structural and optical properties comparable to films grown by epitaxial deposition techniques with similar substitutional N content. The effects of N<sup>+</sup> implantation dose, laser energy fluence, and rapid thermal annealing temperature on the N incorporation as well as optical and structural properties of the GaN<sub>x</sub>As<sub>1–x</sub> films are discussed. | en |
dc.description.sponsorship | Engineering and Applied Sciences | en |
dc.language.iso | en_US | en |
dc.publisher | American Institute of Physics | en |
dc.relation.isversionof | http://dx.doi.org/10.1063/1.1582393 | en |
dc.relation.hasversion | http://www.seas.harvard.edu/matsci/people/aziz/publications/mja149.pdf | en |
dash.license | META_ONLY | |
dc.title | Synthesis of GaNxAs1-x thin films by pulsed laser melting and rapid thermal annealing of N+-implanted GaAs | en |
dc.relation.journal | Journal of Applied Physics | en |
dash.depositing.author | Aziz, Michael | |
dash.embargo.until | 10000-01-01 | |
dc.identifier.doi | 10.1063/1.1582393 | * |
dash.authorsordered | false | |
dash.contributor.affiliated | Aziz, Michael | |