Synthesis of GaNxAs1-x thin films by pulsed laser melting and rapid thermal annealing of N+-implanted GaAs

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Synthesis of GaNxAs1-x thin films by pulsed laser melting and rapid thermal annealing of N+-implanted GaAs

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dc.contributor.author Liliental-Weber, Zuzanna
dc.contributor.author Scarpulla, Michael A.
dc.contributor.author Dubon, Oscar D., Jr.
dc.contributor.author Jasinski, Jacek
dc.contributor.author Yu, Kin Man
dc.contributor.author Wu, Jay
dc.contributor.author Pillai, Manoj R.
dc.contributor.author Aziz, Michael
dc.contributor.author Walukiewicz, Wladek
dc.contributor.author J. W., Beeman
dc.date.accessioned 2009-04-21T14:27:15Z
dc.date.issued 2003
dc.identifier.citation Yu, Kin Man, Wladek Walukiewicz, Michael A. Scarpulla, Oscar D. Dubon, Jr., Jay Wu, Jacek Jasinski, Zuzanna Liliental-Weber, J. W. Beeman, Manoj R. Pillai, and Michael J. Aziz. Synthesis of GaN x As 1-x thin films by pulsed laser melting and rapid thermal annealing of N +-implanted GaAs. 2003. Journal of Applied Physics 94(2): 1043-1049. en
dc.identifier.issn 1089-7550 en
dc.identifier.issn 0021-8979 en
dc.identifier.uri http://nrs.harvard.edu/urn-3:HUL.InstRepos:2797690
dc.description.abstract We present a systematic investigation on the formation of the highly mismatched alloy GaN<sub>x</sub>As<sub>1–x</sub> using N<sup>+</sup>-implantation followed by a combination of pulsed laser melting and rapid thermal annealing. Thin films of GaN<sub>x</sub>As<sub>1–x</sub> with x as high as 0.016 and an activation efficiency of the implanted N up to 50% have been synthesized with structural and optical properties comparable to films grown by epitaxial deposition techniques with similar substitutional N content. The effects of N<sup>+</sup> implantation dose, laser energy fluence, and rapid thermal annealing temperature on the N incorporation as well as optical and structural properties of the GaN<sub>x</sub>As<sub>1–x</sub> films are discussed. en
dc.description.sponsorship Engineering and Applied Sciences en
dc.language.iso en_US en
dc.publisher American Institute of Physics en
dc.relation.isversionof http://dx.doi.org/10.1063/1.1582393 en
dc.relation.hasversion http://www.seas.harvard.edu/matsci/people/aziz/publications/mja149.pdf en
dash.license META_ONLY
dc.title Synthesis of GaNxAs1-x thin films by pulsed laser melting and rapid thermal annealing of N+-implanted GaAs en
dc.relation.journal Journal of Applied Physics en
dash.depositing.author Aziz, Michael
dash.embargo.until 10000-01-01

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