Comparison of Growth Morphology in Ge (001) Homoepitaxy Using Pulsed Laser Deposition and MBE

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Comparison of Growth Morphology in Ge (001) Homoepitaxy Using Pulsed Laser Deposition and MBE

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Title: Comparison of Growth Morphology in Ge (001) Homoepitaxy Using Pulsed Laser Deposition and MBE
Author: McCamy, James W.; Leonard, John P.; Shin, Byungha; Aziz, Michael

Note: Order does not necessarily reflect citation order of authors.

Citation: Leonard, John P., Byungha Shin, James W. McCamy, and Michael J. Aziz. Comparison of growth morphology in Ge (001) homoepitaxy using pulsed laser deposition and MBE. Materials Research Society Symposium Proceedings 749: W16.11.
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Abstract: Differences in the homoepitaxy of Ge(001) are explored using a dual MBE/PLD deposition system. With identical substrate preparation, temperature calibration, background pressure and analysis, the system provides a unique comparison of the processes arising only from kinetic differences in the flux and at the surface. All films show mounded growth. At substrate temperatures below 200ºC, PLD films are smoother than MBE films, whereas they are similar at higher temperatures.
Published Version: http://www.mrs.org/s_mrs/sec_subscribe.asp?CID=2572&DID=118884&action=detail
Other Sources: http://www.seas.harvard.edu/matsci/people/aziz/publications/mja142.pdf
Terms of Use: This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:2797691
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