Comparison of Growth Morphology in Ge (001) Homoepitaxy Using Pulsed Laser Deposition and MBE
Leonard, John P.
McCamy, James W.
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CitationLeonard, John P., Byungha Shin, James W. McCamy, and Michael J. Aziz. Comparison of growth morphology in Ge (001) homoepitaxy using pulsed laser deposition and MBE. Materials Research Society Symposium Proceedings 749: W16.11.
AbstractDifferences in the homoepitaxy of Ge(001) are explored using a dual MBE/PLD deposition system. With identical substrate preparation, temperature calibration, background pressure and analysis, the system provides a unique comparison of the processes arising only from kinetic differences in the flux and at the surface. All films show mounded growth. At substrate temperatures below 200ºC, PLD films are smoother than MBE films, whereas they are similar at higher temperatures.
Citable link to this pagehttp://nrs.harvard.edu/urn-3:HUL.InstRepos:2797691
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