Spin-Polarized Quantum Well States on Bi2-xFexSe3
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Author
Yee, Michael M.
Zhu, Z.-H.
Soumyanarayanan, Anjan
Song, Can-Li
Pomjakushina, Ekaterina
Salman, Zaher
Kanigel, Amit
Segawa, Kouji
Ando, Yoichi
Note: Order does not necessarily reflect citation order of authors.
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https://doi.org/10.1103/PhysRevB.91.161306Metadata
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Yee, Michael M., Z.-H. Zhu, Anjan Soumyanarayanan, Yang He, Can-Li Song, Ekaterina Pomjakushina, Zaher Salman, et al. 2015. Spin-Polarized Quantum Well States on Bi2-xFexSe3. Physical Review B 91 (16). doi:10.1103/physrevb.91.161306.Abstract
Low temperature scanning tunneling microscopy is used to image the doped topological insulator FexBi2−xSe3. Interstitial Fe defects allow the detection of quasiparticle interference (QPI), and the reconstruction of the empty state band structure. Quantitative comparison between measured data and density functional theory calculations reveals the unexpected coexistence of quantum well states (QWS) with topological surface states (TSS) on the atomically clean surface of FexBi2−xSe3. Spectroscopic measurements quantify the breakdown of linear dispersion due to hexagonal warping. Nonetheless, both QWS and TSS remain spin-polarized and protected from backscattering to almost 1 eV above the Dirac point, suggesting their utility for spin-based applications.Other Sources
https://arxiv.org/pdf/1501.05598.pdfTerms of Use
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