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dc.contributor.authorAziz, Michael
dc.contributor.authorBoatner, L. A.
dc.contributor.authorRankin, J.
dc.contributor.authorWhite, C. Woody
dc.date.accessioned2009-04-29T14:48:21Z
dc.date.issued1987
dc.identifier.citationAziz, Michael J., L. A. Boatner, J. Rankin, and C. W. White. 1987. Ion Implantation and Annealing of SrTiO3 and CaTiO3. Materials Research Society Symposium Proceedings 93: 9-13.en
dc.identifier.issn0272-9172en
dc.identifier.urihttp://nrs.harvard.edu/urn-3:HUL.InstRepos:2839216
dc.description.abstractIon implantation damage and thermal annealing results are presented for single crystals of SrTiO<sub>3</sub> and CaTiO<sub>3</sub>. The near-surface region of both of these materials can be made amorphous by low doses (~10<sup>15</sup>/cm<sup>2</sup>) of heavy ions (PB at 540 KeV). During annealing, the amorphous implanted region crystallizes epitaxially on the underlying single-crystal substrate. The kinetics of this solid-phase epitaxial recrystallization process have been measured by employing ion channeling techniques.en
dc.description.sponsorshipPhysicsen
dc.language.isoen_USen
dc.publisherMaterials Research Societyen
dc.relation.isversionofhttp://www.mrs.org/s_mrs/sec.asp?CID=1727&DID=38980en
dc.relation.hasversionhttp://www.seas.harvard.edu/matsci/people/aziz/publications/mja033.pdfen
dash.licenseLAA
dc.titleIon Implantation and Annealing of SrTiO3 and CaTiO3en
dc.relation.journalMaterials Research Society Symposia Proceedingsen
dash.depositing.authorAziz, Michael
dc.identifier.doi10.1557/PROC-93-9
dash.contributor.affiliatedAziz, Michael


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