Ion Implantation and Annealing of Oxides

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Ion Implantation and Annealing of Oxides

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Title: Ion Implantation and Annealing of Oxides
Author: Sklad, P. S.; Boatner, L. A.; Rankin, J.; McHargue, C. J.; Pennycook, S. J.; Aziz, Michael; White, C. Woody; Farlow, G. C.

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Citation: Aziz, Michael J., L. A. Boatner, G. C. Farlow, C. J. McHargue, S. J. Pennycook, J. Rankin, P. S. Sklad, and C. W. White. 1987. Ion Implantation and Annealing of Oxides. Materials Research Society Symposia Proceedings 74: 357-364.
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Abstract: Ion implantation damage and annealing results are presented for a number of crystalline oxides. In Al2O3, the amorphous phase produced by ion bombardment of the pure material first crystallizes in the (crystal-line) Y phase. This is followed by the transformaiton of Y-Al2O3 to a-Al2O3 at a well defined interface. The activation energy for of a alumina from y is 3.6 eV/atom. In CaTiO3, the implantation-induced amorphous phase transforms to remain crystalline even after high implantation doses at liquid nitrogen temperatures. The near surface of KTaO3 is transformed to a polycrystalline state after inplantation at room temperature or liquid nitrogen temperature.
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