dc.contributor.author | Steinmann, Vera | |
dc.contributor.author | Chakraborty, Rupak | |
dc.contributor.author | Rekemeyer, Paul H. | |
dc.contributor.author | Hartman, Katy | |
dc.contributor.author | Brandt, Riley E. | |
dc.contributor.author | Polizzotti, Alex | |
dc.contributor.author | Yang, Chuanxi | |
dc.contributor.author | Moriarty, Tom | |
dc.contributor.author | Gradecak, Silvija | |
dc.contributor.author | Gordon, Roy Gerald | |
dc.contributor.author | Buonassisi, Tonio | |
dc.date.accessioned | 2016-09-27T18:59:58Z | |
dc.date.issued | 2016 | |
dc.identifier | Quick submit: 2016-08-22T15:59:35-0400 | |
dc.identifier.citation | Steinmann, Vera, Rupak Chakraborty, Paul H. Rekemeyer, Katy Hartman, Riley E. Brandt, Alex Polizzotti, Chuanxi Yang, et al. 2016. “A Two-Step Absorber Deposition Approach To Overcome Shunt Losses in Thin-Film Solar Cells: Using Tin Sulfide as a Proof-of-Concept Material System.” ACS Applied Materials & Interfaces 8 (34) (August 31): 22664–22670. doi:10.1021/acsami.6b07198. | en_US |
dc.identifier.issn | 1944-8244 | en_US |
dc.identifier.uri | http://nrs.harvard.edu/urn-3:HUL.InstRepos:28553791 | |
dc.description.abstract | As novel absorber materials are developed and screened for their photovoltaic (PV) properties, the challenge remains to reproducibly test promising candidates for high-performing PV devices. Many early-stage devices are prone to device shunting due to pinholes in the absorber layer, producing “false negative” results. Here, we demonstrate a device engineering solution towards a robust device architecture, using a two-step absorber deposition approach. We use tin sulfide (SnS) as a test absorber material. The SnS bulk is processed at high temperature (400˚C) to stimulate grain growth, followed by a much thinner, low-temperature (200˚C) absorber deposition. At lower process temperature, the thin absorber overlayer contains significantly smaller, densely packed grains, which are likely to provide a continuous coating and fill pinholes in the underlying absorber bulk. We compare this two-step approach to the more standard approach of using a semi-insulating buffer layer directly on top of the annealed absorber bulk, and demonstrate a more than 3.5x superior shunt resistance Rsh with smaller standard error σRsh. Electron-beam induced current (EBIC) measurements indicate a lower density of pinholes in the SnS absorber bulk when using the two-step absorber deposition approach. We correlate those findings to improvements in the device performance and device performance reproducibility. | en_US |
dc.description.sponsorship | Chemistry and Chemical Biology | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | American Chemical Society (ACS) | en_US |
dc.relation.isversionof | 10.1021/acsami.6b07198 | en_US |
dash.license | OAP | |
dc.subject | device shunting | en_US |
dc.subject | novel absorber materials | en_US |
dc.subject | performance reliability | en_US |
dc.subject | photovoltaics | en_US |
dc.subject | thin-films | en_US |
dc.subject | tin sulfide | en_US |
dc.title | A Two-Step Absorber Deposition Approach To Overcome Shunt Losses in Thin-Film Solar Cells: Using Tin Sulfide as a Proof-of-Concept Material System | en_US |
dc.type | Journal Article | en_US |
dc.date.updated | 2016-08-22T19:59:56Z | |
dc.description.version | Accepted Manuscript | en_US |
dc.relation.journal | ACS Appl. Mater. Interfaces | en_US |
dash.depositing.author | Gordon, Roy Gerald | |
dc.date.available | 2016 | |
dc.date.available | 2016-09-27T18:59:58Z | |
dc.identifier.doi | 10.1021/acsami.6b07198 | * |
dash.authorsordered | false | |
dash.contributor.affiliated | Yang, Chuanxi | |
dash.contributor.affiliated | Steinmann, Vera | |
dash.contributor.affiliated | Gordon, Roy | |