Pressure-Enhanced Solid Phase Epitaxy: Implications for Point Defect Mechanisms

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Pressure-Enhanced Solid Phase Epitaxy: Implications for Point Defect Mechanisms

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Title: Pressure-Enhanced Solid Phase Epitaxy: Implications for Point Defect Mechanisms
Author: Nygren, Eric; Lu, Guo-Quan; Aziz, Michael

Note: Order does not necessarily reflect citation order of authors.

Citation: Lu, Guo-Quan, Eric Nygren, and Michael J. Aziz. 1992. Pressure-Enhanced solid phase epitaxy: Implications for point defect mechanisms. Materials Research Society Symposia Proceedings 205: 33-38.
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Abstract: We have measured the effects of hydrostatic pressure on the solid phase epitaxial growth (SPEG) rates of undoped GE(100) into their respective self-implanted amorphous volumes equal to -3.3 +/- 0.3cm3/mole for Si and -6.3 +/- 0.60cm3/mole for Ge. The results of this and other experiments are inconsistent with all bulk point-defect mechanisms, but are consistent with all interface point-defect mechanisms proposed to date for thermal SPEG. A kinetic analysis of the Spaepen-Turnbull bond mechanism shows it to be a highly plausible model for the growth process.
Published Version: http://www.mrs.org/s_mrs/sec.asp?CID=1727&DID=38980
Other Sources: http://www.seas.harvard.edu/matsci/people/aziz/publications/mja050.pdf
Terms of Use: This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:2859903
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