Pressure-Enhanced Solid Phase Epitaxy: Implications for Point Defect Mechanisms
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CitationLu, Guo-Quan, Eric Nygren, and Michael J. Aziz. 1992. Pressure-Enhanced solid phase epitaxy: Implications for point defect mechanisms. Materials Research Society Symposia Proceedings 205: 33-38.
AbstractWe have measured the effects of hydrostatic pressure on the solid phase epitaxial growth (SPEG) rates of undoped GE(100) into their respective self-implanted amorphous volumes equal to -3.3 +/- 0.3cm3/mole for Si and -6.3 +/- 0.60cm3/mole for Ge. The results of this and other experiments are inconsistent with all bulk point-defect mechanisms, but are consistent with all interface point-defect mechanisms proposed to date for thermal SPEG. A kinetic analysis of the Spaepen-Turnbull bond mechanism shows it to be a highly plausible model for the growth process.
Citable link to this pagehttp://nrs.harvard.edu/urn-3:HUL.InstRepos:2859903
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