Effect of Pressure on Boron Diffusion in Silicon

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Effect of Pressure on Boron Diffusion in Silicon

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Title: Effect of Pressure on Boron Diffusion in Silicon
Author: Schiferl, David; Zhao, Yuechao; Mitha, Salman; Aziz, Michael

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Citation: Zhao, Yuechao, Michael J. Aziz, Salman Mitha, and David Schiferl. 1997. Effect of pressure on Boron diffusion in Silicon. Materials Research Society Symposia Proceedings 442: 305-411.
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Abstract: We are studying the effect of pressure on boron diffusion in silicon in order to better understand the nature of the point defects responsible for diffusion. Si homoepitaxial layers delta-doped with boron were grown using molecular beam epitaxy. Diffusion anneals were performed in a high temperature diamond anvil cell using fluid argon as a pressure medium. Diffusivities were deduced from B concentration-depth profiles measured with using secondary ion mass spectrometry. Preliminary results indicate that pressure enhances B diffusion in Si at 850 ˚C, characterized by an average activation volume of -0.125±0.02 times the atomic volume, and thus appear consistent with an interstitial-based diffusion mechanism. Results are compared with previous hydrostatic-pressure studies, with results in biaxially strained films, and with atomistic calculations of activation volumes for self diffusion.
Published Version: http://www.mrs.org/s_mrs/sec.asp?CID=1727&DID=38980
Other Sources: http://www.seas.harvard.edu/matsci/people/aziz/publications/mja093.pdf
Terms of Use: This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:2870608
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