Thermodynamics of Diffusion under Pressure and Stress: Relation to Point Defect Mechanisms
Dark file--Publisher's version (110.1Kb)
Access StatusFull text of the requested work is not available in DASH at this time ("dark deposit"). For more information on dark deposits, see our FAQ.
MetadataShow full item record
CitationAziz, Michael J. 1997. Thermodynamics of diffusion under pressure and stress: Relation to point defect mechanisms. Applied Physics Letters 70(21): 2810-2812.
AbstractA thermodynamic formalism is developed for illuminating the predominant point defect mechanism of self- and impurity diffusion in silicon and is used to provide a rigorous basis for point defect-based interpretation of diffusion experiments in biaxially strained epitaxial layers in the Si–Ge system. A speciﬁc combination of the hydrostatic and biaxial stress dependences of the diffusivity is +/- 1 times the atomic volume, depending upon whether the predominant mechanism involves vacancies or interstitials. Experimental results for Sb diffusion in biaxially strained Si–Ge ﬁlms and ab initio calculations of the activation volume for Sb diffusion by a vacancy mechanism are in quantitative agreement with no free parameters. Key parameters are identiﬁed that must be measured or calculated for a quantitative test of interstitial-based mechanisms.
Citable link to this pagehttp://nrs.harvard.edu/urn-3:HUL.InstRepos:2870610
- FAS Scholarly Articles