Solute Trapping of Ge in Al

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Solute Trapping of Ge in Al

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Title: Solute Trapping of Ge in Al
Author: West, Jeffrey A.; Smith, Patrick M.; Aziz, Michael

Note: Order does not necessarily reflect citation order of authors.

Citation: Smith, Patrick M., Jeffrey A. West, Michael J. Aziz. 1992. Solute Trapping of Ge in Al. Materials Research Society Symposia Proceedings 205: 331-336.
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Abstract: Partitioning during rapid solidification of dilute Al-Ge alloys has been investigated. Implanted thin films of Al have been pulsed-laser melted to obtain solidification at velocities in the range of 0.01 m/s to 3.3 m/s, as measured by the transient conductance technique. Previous and subsequent Rutherford Backscattering depth profiling of the Ge solute in the Al alloys has been used to determine the nonequilibrium partition coefficient k. A significant degree of lateral film growth during solidification confines determination of k to the placing of an upper bound of 0.22 on <i>k</k> for solidification velocities in this range. We place a lower limit of 10 m/s on the "diffusive velocity," which locates the transition from solute paritioning to solute trapping in the Continuous Growth Model.
Published Version: http://www.mrs.org/s_mrs/sec.asp?CID=1727&DID=38980
Other Sources: http://www.seas.harvard.edu/matsci/people/aziz/publications/mja054.pdf
Terms of Use: This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:2870695
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