Modeling a Growth Instability in Stressed Boron Doped Silicon

DSpace/Manakin Repository

Modeling a Growth Instability in Stressed Boron Doped Silicon

Citable link to this page

 

 
Title: Modeling a Growth Instability in Stressed Boron Doped Silicon
Author: Gray, Leonard J.; Kaplan, Ted; Aziz, Michael; Barvosa-Carter, William; Phan, Anh Vu

Note: Order does not necessarily reflect citation order of authors.

Citation: Phan, Ahn Vu, Ted Kaplan, Leonard J. Gray, William Barvosa-Carter, and Michael J. Aziz. Modeling a growth instability in stressed boron doped silicon. In 2002 International Conference on Modeling and Simulation of Microsystems: MSM 2002, April 21-25, 2002, San Juan, Puerto Rico : NanoTech 2002 ACRS joint meeting (MSM/ICCN), ed. MSM 2002, Matthew Laudon, and Bartlomiej F. Romanowicz. Cambridge, Mass.: Computational Publications.
Access Status: Full text of the requested work is not available in DASH at this time (“dark deposit”). For more information on dark deposits, see our FAQ.
Full Text & Related Files:
Abstract: The effects of rate-enhancing dopants and externally applied stress on interfacial growth during silicon crystallization are modeled using advanced numerical methods. The boron doped crystalline Si is modeled as an isotropic linear elastic solid, and the amorphous as a viscous fluid with a time dependent viscosity to reflect structural relaxation. The e ffect of the dopant is included through its position dependent effect on the rate of crystallization at the interface. Appropriate coupling conditions across the boundary are defined, and both problems are solved using advanced boundary integral methods. The interface is advanced in time using the level set technique. The simulation results match well with experiments and support the fact that both stress and dopant-gradient e ffects, along with interface orientation e ffects, must be accounted for to explain the observed behavior. These new effects are of general relevance to the growth of all non-hydrostatically stressed solids, and are therefore important in film synthesis, with potentially significant applications in electronic devices and thin film coatings.
Published Version: http://www.nsti.org/publications/MSM/2002/pdf/324.pdf
Other Sources: http://www.seas.harvard.edu/matsci/people/aziz/publications/mja139.pdf
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:2870696
Downloads of this work:

Show full Dublin Core record

This item appears in the following Collection(s)

 
 

Search DASH


Advanced Search
 
 

Submitters