Enhanced Nitrogen Incorporation by Pulsed Laser Annealing of GaNxAs1-x Formed by N Ion Implantation

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Enhanced Nitrogen Incorporation by Pulsed Laser Annealing of GaNxAs1-x Formed by N Ion Implantation

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Title: Enhanced Nitrogen Incorporation by Pulsed Laser Annealing of GaNxAs1-x Formed by N Ion Implantation
Author: Aziz, Michael; Walukiewicz, Wladek; Pillai, Manoj R.; Beeman, J. W.; Yu, Kin Man; Scarpulla, Michael A.; Dubon, Oscar D.

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Citation: Yu, Kin Man, Wladek Walukiewicz , J. W. Beeman, Michael A. Scarpulla, Oscar D. Dubon, Manaj R. Pillai and Michael J. Aziz. Enhanced nitrogen incorporation by pulsed laser annealing of GaNxAs1-x formed by N ion implantation. Applied Physics Letters 80(21): 3958-3960.
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Abstract: We demonstrate that pulsed laser annealing followed by rapid thermal annealing greatly enhances incorporation of substitutional N in N+-implanted GaAs. Films implanted to 1.8% N exhibit a fundamental band gap of 1.26 eV (a band gap reduction of 160 meV), corresponding to an N activation efficiency of 50%. The optical and crystalline quality of the synthesized film is comparable to GaNxAs1-x thin films of similar composition grown by epitaxial growth techniques. Compared to films produced by N+ implantation and rapid thermal annealing only, the introduction of pulsed laser annealing improves N incorporation by a factor of 5. Moreover, we find that the synthesized films are thermally stable up to an annealing temperature of 950 °C.
Published Version: http://dx.doi.org/10.1063/1.1481196
Other Sources: www.seas.harvard.edu/matsci/people/aziz/publications/mja140.pdf
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:2870697
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