Ferromagnetic Ga1-xMnx as Films Produced by Ion Implantation and Pulsed Laser Melting
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Scarpulla, Michael A.
Dubon, Oscar D.
Yu, Kin Man
Pillai, Manoj R.
Ridgway, Mark C.
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CitationScarpulla, Michael A., Oscar D. Dubon, Kin Man Yu, Orthan Monteiro, Manoj R. Pillai, Michael J. Aziz, and Mark C. Ridgway. 2003. Ferromagnetic Ga1-xMnx as films produced by ion implantation and pulsed laser melting. Applied Physics Letters 82(8): 1251-1253.
AbstractWe demonstrate the formation of ferromagnetic Ga1-xMnxAs films by Mn ion implantation into GaAs followed by pulsed-laser melting. Irradiation with a single excimer laser pulse results in the
epitaxial regrowth of the implanted layer with Mn substitutional fraction up to 80% and effective Curie temperature up to 29 K for samples with a maximum Mn concentration of x'0.03. A remanent magnetization persisting above 85 K has been observed for samples with x'0.10, in which 40% of the Mn resides on substitutional lattice sites. We find that the ferromagnetism in Ga1-xMnxAs is rather robust to the presence of structural defects.
Citable link to this pagehttp://nrs.harvard.edu/urn-3:HUL.InstRepos:2875820
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