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dc.contributor.authorScarpulla, Michael A.
dc.contributor.authorDubon, Oscar D.
dc.contributor.authorYu, Kin Man
dc.contributor.authorMonteiro, Orthon
dc.contributor.authorPillai, Manoj R.
dc.contributor.authorAziz, Michael
dc.contributor.authorRidgway, Mark C.
dc.date.accessioned2009-04-30T19:23:03Z
dc.date.issued2003
dc.identifier.citationScarpulla, Michael A., Oscar D. Dubon, Kin Man Yu, Orthan Monteiro, Manoj R. Pillai, Michael J. Aziz, and Mark C. Ridgway. 2003. Ferromagnetic Ga1-xMnx as films produced by ion implantation and pulsed laser melting. Applied Physics Letters 82(8): 1251-1253.en
dc.identifier.issn0003-6951en
dc.identifier.urihttp://nrs.harvard.edu/urn-3:HUL.InstRepos:2875820
dc.description.abstractWe demonstrate the formation of ferromagnetic Ga<sub>1-x</sub>Mn<sub>x</sub>As films by Mn ion implantation into GaAs followed by pulsed-laser melting. Irradiation with a single excimer laser pulse results in the epitaxial regrowth of the implanted layer with Mn substitutional fraction up to 80% and effective Curie temperature up to 29 K for samples with a maximum Mn concentration of x'0.03. A remanent magnetization persisting above 85 K has been observed for samples with x'0.10, in which 40% of the Mn resides on substitutional lattice sites. We find that the ferromagnetism in Ga<sub>1-x</sub>Mn<sub>x</sub>As is rather robust to the presence of structural defects.en
dc.description.sponsorshipEngineering and Applied Sciencesen
dc.language.isoen_USen
dc.publisherAmerican Institute of Physicsen
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.1555260en
dc.relation.hasversionhttp://www.seas.harvard.edu/matsci/people/aziz/publications/mja141.pdfen
dash.licenseMETA_ONLY
dc.titleFerromagnetic Ga1-xMnx as Films Produced by Ion Implantation and Pulsed Laser Meltingen
dc.relation.journalApplied Physics Lettersen
dash.depositing.authorAziz, Michael
dash.embargo.until10000-01-01
dc.identifier.doi10.1063/1.1555260*
dash.contributor.affiliatedAziz, Michael


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