Role of Chemical Potentials in Surface Reconstruction: A New Model and Phase Transition of GaAs(111)2x2
Joannopoulos, John D.
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CitationKaxiras, Efthimios, K. C. Pandey, Yaneer Bar-Yam, and John D. Joannopoulos. Role of chemical potentials in surface reconstruction: A new model and phase transition of GaAs(111)2x2. Physical Review Letters 56, no. 26: 2819-2821.
AbstractThe role of chemical potentials in surface reconstructions is examined and shown to be crucial for binary semiconductor srufaces such as GaAs(111)2×2. We predict that under As-rich conditions a new model, the As triangle, is the lowest-energy geometry, whereas the Ga-vacancy model is appropriate for Ga-rich conditions. A change in the relative chemical potential of Ga and As should produce a phase transition between the two structures.
Citable link to this pagehttp://nrs.harvard.edu/urn-3:HUL.InstRepos:2894634
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