Show simple item record

dc.contributor.authorKaxiras, Efthimios
dc.contributor.authorPandey, K.C.
dc.contributor.authorBar-Yam, Yaneer
dc.contributor.authorJoannopoulos, John D.
dc.date.accessioned2009-05-01T20:02:57Z
dc.date.issued1986
dc.identifier.citationKaxiras, Efthimios, K. C. Pandey, Yaneer Bar-Yam, and John D. Joannopoulos. Role of chemical potentials in surface reconstruction: A new model and phase transition of GaAs(111)2x2. Physical Review Letters 56, no. 26: 2819-2821.en
dc.identifier.issn0031-9007en
dc.identifier.urihttp://nrs.harvard.edu/urn-3:HUL.InstRepos:2894634
dc.description.abstractThe role of chemical potentials in surface reconstructions is examined and shown to be crucial for binary semiconductor srufaces such as GaAs(111)2×2. We predict that under As-rich conditions a new model, the As triangle, is the lowest-energy geometry, whereas the Ga-vacancy model is appropriate for Ga-rich conditions. A change in the relative chemical potential of Ga and As should produce a phase transition between the two structures.en
dc.description.sponsorshipEngineering and Applied Sciencesen
dc.language.isoen_USen
dc.publisherAmerican Physical Societyen
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevLett.56.2819en
dash.licenseLAA
dc.titleRole of Chemical Potentials in Surface Reconstruction: A New Model and Phase Transition of GaAs(111)2x2en
dc.relation.journalPhysical Review Lettersen
dash.depositing.authorKaxiras, Efthimios
dc.identifier.doi10.1103/PhysRevLett.56.2819*
dash.contributor.affiliatedKaxiras, Efthimios


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record