| dc.contributor.author | Kaxiras, Efthimios | |
| dc.contributor.author | Pandey, K.C. | |
| dc.contributor.author | Bar-Yam, Yaneer | |
| dc.contributor.author | Joannopoulos, John D. | |
| dc.date.accessioned | 2009-05-01T20:02:57Z | |
| dc.date.issued | 1986 | |
| dc.identifier.citation | Kaxiras, Efthimios, K. C. Pandey, Yaneer Bar-Yam, and John D. Joannopoulos. Role of chemical potentials in surface reconstruction: A new model and phase transition of GaAs(111)2x2. Physical Review Letters 56, no. 26: 2819-2821. | en |
| dc.identifier.issn | 0031-9007 | en |
| dc.identifier.uri | http://nrs.harvard.edu/urn-3:HUL.InstRepos:2894634 | |
| dc.description.abstract | The role of chemical potentials in surface reconstructions is examined and shown to be crucial for binary semiconductor srufaces such as GaAs(111)2×2. We predict that under As-rich conditions a new model, the As triangle, is the lowest-energy geometry, whereas the Ga-vacancy model is appropriate for Ga-rich conditions. A change in the relative chemical potential of Ga and As should produce a phase transition between the two structures. | en |
| dc.description.sponsorship | Engineering and Applied Sciences | en |
| dc.language.iso | en_US | en |
| dc.publisher | American Physical Society | en |
| dc.relation.isversionof | http://dx.doi.org/10.1103/PhysRevLett.56.2819 | en |
| dash.license | LAA | |
| dc.title | Role of Chemical Potentials in Surface Reconstruction: A New Model and Phase Transition of GaAs(111)2x2 | en |
| dc.relation.journal | Physical Review Letters | en |
| dash.depositing.author | Kaxiras, Efthimios | |
| dc.identifier.doi | 10.1103/PhysRevLett.56.2819 | * |
| dash.contributor.affiliated | Kaxiras, Efthimios | |
