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AlGaN/GaN MOSHEMT on Si Substrate with High on/off Ratio and High Off-state Breakdown Voltage Enabled by Atomic Layer Epitaxial MgCaO as Gate Dielectric

dc.contributor.authorZhou, Hongchao
dc.contributor.authorLou, Xiabing
dc.contributor.authorChabak, Kelson
dc.contributor.authorGordon, Roy Gerald
dc.contributor.authorYe, Peide
dc.date.accessioned2016-10-13T18:27:49Z
dc.date.issued2016-10-13
dc.identifierQuick submit: 2016-03-08T12:09:16-0500
dc.identifier.citationZhou, Hong; Lou, Xiabing; Chabak, Kelson D.; Gordon, R.G.; Ye, Peide D. 2015. AlGaN/GaN MOSHEMT on Si Substrate with High on/off Ratio and High Off-state Breakdown Voltage Enabled by Atomic Layer Epitaxial MgCaO as Gate Dielectric. 46th IEEE Semiconductor Interface Specialists Conference, Arlington, VA, December 2-5, 2015.en_US
dc.identifier.urihttp://nrs.harvard.edu/urn-3:HUL.InstRepos:29003619
dc.description.sponsorshipChemistry and Chemical Biologyen_US
dc.language.isoen_USen_US
dc.relation.hasversionhttp://faculty.chemistry.harvard.edu/files/gordon/files/mgcao-algan-gan-si-sisc-2015_1.pdfen_US
dash.licenseOAP
dc.titleAlGaN/GaN MOSHEMT on Si Substrate with High on/off Ratio and High Off-state Breakdown Voltage Enabled by Atomic Layer Epitaxial MgCaO as Gate Dielectricen_US
dc.typeConference Paperen_US
dc.date.updated2016-03-08T17:09:24Z
dc.description.versionAccepted Manuscripten_US
dash.depositing.authorGordon, Roy Gerald
dc.date.available2015
dc.date.available2016-10-13T18:27:49Z
dash.contributor.affiliatedZhou, Hongchao
dash.contributor.affiliatedLou, Xiabing
dash.contributor.affiliatedGordon, Roy


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