Solute Trapping in Silicon by Lateral Motion of {111} Ledges

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Solute Trapping in Silicon by Lateral Motion of {111} Ledges

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Title: Solute Trapping in Silicon by Lateral Motion of {111} Ledges
Author: White, C. Woody; Aziz, Michael

Note: Order does not necessarily reflect citation order of authors.

Citation: Aziz, Michael J. and C. W. White. 1986. Solute trapping in silicon by lateral motion of {111} ledges. Physical Review Letters 57, no. 21: 2675-2678.
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Abstract: The orientation dependence of the nonequilibrium partition coefficient of Bi in Si at constant solid-liquid interface velocity has been measured. The partition coefficient, measured with pulsed-laser melting techniques on a series of Si wafers cut at 5° increments from (110) through (111) to (001), is sharply peaked at (111) and decreases monotonically with increasing inclination from (111). The results suggest that crystal growth and solute trapping occur by the lateral motion of {111} ledges.
Published Version: http://dx.doi.org/10.1103/PhysRevLett.57.2675
Other Sources: http://www.seas.harvard.edu/matsci/people/aziz/publications/mja024.pdf
Terms of Use: This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:2913046
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