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dc.contributor.authorAziz, Michael
dc.contributor.authorWhite, C. Woody
dc.date.accessioned2009-05-11T19:57:16Z
dc.date.issued1986
dc.identifier.citationAziz, Michael J. and C. W. White. 1986. Solute trapping in silicon by lateral motion of {111} ledges. Physical Review Letters 57, no. 21: 2675-2678.en
dc.identifier.issn0031-9007en
dc.identifier.urihttp://nrs.harvard.edu/urn-3:HUL.InstRepos:2913046
dc.description.abstractThe orientation dependence of the nonequilibrium partition coefficient of Bi in Si at constant solid-liquid interface velocity has been measured. The partition coefficient, measured with pulsed-laser melting techniques on a series of Si wafers cut at 5° increments from (110) through (111) to (001), is sharply peaked at (111) and decreases monotonically with increasing inclination from (111). The results suggest that crystal growth and solute trapping occur by the lateral motion of {111} ledges.en
dc.description.sponsorshipEngineering and Applied Sciencesen
dc.language.isoen_USen
dc.publisherAmerican Physical Societyen
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevLett.57.2675en
dc.relation.hasversionhttp://www.seas.harvard.edu/matsci/people/aziz/publications/mja024.pdfen
dash.licenseLAA
dc.titleSolute Trapping in Silicon by Lateral Motion of {111} Ledgesen
dc.relation.journalPhysical Review Lettersen
dash.depositing.authorAziz, Michael
dc.identifier.doi10.1103/PhysRevLett.57.2675*
dash.contributor.affiliatedAziz, Michael


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