Show simple item record

dc.contributor.authorLu, Guo-Quan
dc.contributor.authorNygren, Eric
dc.contributor.authorAziz, Michael
dc.contributor.authorTurnbull, David
dc.contributor.authorWhite, C. Woody
dc.date.accessioned2009-05-11T20:37:12Z
dc.date.issued1988
dc.identifier.citationLu, Guo-Quan, Eric Nygren, Michael J. Aziz, David Turnbull, and C. Woody White. 1988. Time-Resolved reflectivity measurement of the pressure-enhanced crystallization rate of amorphous Si in a diamond anvil cell. Materials Research Society Symposia Proceedings 100: 435-440.en
dc.identifier.issn0272-9172en
dc.identifier.urihttp://nrs.harvard.edu/urn-3:HUL.InstRepos:2913133
dc.description.abstractThe authors have measured the pressure dependence of the solid phase epitaxial growth (SPEG) rate of self-implanted Si (100) by using the in-situ time-resolved reflectivity technique in a high-temperature and high-pressure diamond anvil cell (DAC). With fluid argon as the pressure transmission medium, a clean and perfectly hydrostatic pressure environment is achieved around the sample. The external heating geometry employed in the DAC provides a uniform temperature across the sample. At temperatures in the range of 530-550 deg C and pressure up to 50 kbars (5 GPa), the growth rate is enhanced by up to a factor of ten over that at 1 atmosphere pressure. The results are characterized by a negative activation volume of approximately -3.0 cm/sup 3mole (-27% of the atomic volume). These preliminary results show a significantly weaker pressure dependence than does the previous work of Nygren et al. (1985), who found an activation volume of -8.7 cm/sup 3mole. The implications of these results for the nature of the defect responsible for thermal SPEG and irradiation enhanced SPEG is discussed.en
dc.description.sponsorshipEngineering and Applied Sciencesen
dc.language.isoen_USen
dc.publisherMaterials Research Societyen
dc.relation.isversionofhttp://www.mrs.org/s_mrs/sec.asp?CID=1646&DID=8855en
dc.relation.hasversionhttp://www.seas.harvard.edu/matsci/people/aziz/publications/mja037.pdfen
dash.licenseLAA
dc.titleTime-Resolved Reflectivity Measurement of The Pressure-Enhanced Crystallization Rate of Amorphous Si in a Diamond Anvil Cellen
dc.relation.journalMaterials Research Society Symposia Proceedingsen
dash.depositing.authorAziz, Michael
dc.identifier.doi10.1557/PROC-100-435
dash.contributor.affiliatedAziz, Michael


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record