Interface Velocity Transients During Melting of a-Si/c-Si Thin Films
Tsao, Jeff Y.
Peercy, Paul S.
Thompson, Michael O.
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CitationJeff Y. Tsao, Michael J. Aziz, Paul S. Peercy, Michael O. Thompson. 1988. Interface velocity transients during melting of a-Si/c-Si thin films. Materials Research Society Symposia Proceedings 100: 519-524.
AbstractThe authors report transient conductance measurement of liquid/solid interface velocities during pulsed laser melting of amorphous Si (a-Si) films on crystalline Si (c-Si), and a more accurate, systematic procedure for analyzing these measurements than described in previous work. From these analyses are extracted relations between the melting velocities of a-Si and c-Si at a given interface temperature, and between the temperatures during steady-state melting of a-Si and c-Si at a given interface velocity.
Citable link to this pagehttp://nrs.harvard.edu/urn-3:HUL.InstRepos:2913134
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