Interface Velocity Transients During Melting of a-Si/c-Si Thin Films

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Interface Velocity Transients During Melting of a-Si/c-Si Thin Films

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Title: Interface Velocity Transients During Melting of a-Si/c-Si Thin Films
Author: Aziz, Michael; Peercy, Paul S.; Thompson, Michael O.; Tsao, Jeff Y.

Note: Order does not necessarily reflect citation order of authors.

Citation: Jeff Y. Tsao, Michael J. Aziz, Paul S. Peercy, Michael O. Thompson. 1988. Interface velocity transients during melting of a-Si/c-Si thin films. Materials Research Society Symposia Proceedings 100: 519-524.
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Abstract: The authors report transient conductance measurement of liquid/solid interface velocities during pulsed laser melting of amorphous Si (a-Si) films on crystalline Si (c-Si), and a more accurate, systematic procedure for analyzing these measurements than described in previous work. From these analyses are extracted relations between the melting velocities of a-Si and c-Si at a given interface temperature, and between the temperatures during steady-state melting of a-Si and c-Si at a given interface velocity.
Published Version: http://www.mrs.org/s_mrs/sec.asp?CID=11&DID=16&SID=1
Other Sources: http://www.mrs.org/s_mrs/sec.asp?CID=11&DID=16&SID=1
Terms of Use: This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:2913134
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