Vapor deposition of copper(I) bromide films via a two-step conversion process

DSpace/Manakin Repository

Vapor deposition of copper(I) bromide films via a two-step conversion process

Citable link to this page

 

 
Title: Vapor deposition of copper(I) bromide films via a two-step conversion process
Author: Heasley, Rachel Lenox; Chang, Christina Marie; Davis, Luke M; Liu, Kathy; Gordon, Roy Gerald

Note: Order does not necessarily reflect citation order of authors.

Citation: Heasley, Rachel, Christina M. Chang, Luke M. Davis, Kathy Liu, Roy G. Gordon. 2017. Vapor deposition of copper(I) bromide films via a two-step conversion process. Journal of Vacuum Science and Technology A 35, 01B109. DOI: 10.1116/1.4967726.
Full Text & Related Files:
Abstract: Thin films of Cu2S grown by pulsed-chemical vapor deposition of bis(N,N'-di-secbutylacetamidinato)dicopper(I) and hydrogen sulfide were converted to CuBr upon exposure to anhydrous hydrogen bromide. X-ray diffraction shows that the as-deposited films have a polycrystalline Cu2S structure. After exposure to HBr gas, the surface of the films is transformed to a γ-CuBr polycrystalline structure. Scanning electron microscopy and X-ray photoelectron spectroscopy reveal complete conversion of up to 100 nm of film. However, when the conversion to CuBr approaches the interface between as-deposited Cu2S and the SiO2 substrate, the morphology of the film changes from continuous and nanocrystalline to sparse and microcrystalline.
Terms of Use: This article is made available under the terms and conditions applicable to Open Access Policy Articles, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#OAP
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:29374851
Downloads of this work:

Show full Dublin Core record

This item appears in the following Collection(s)

 
 

Search DASH


Advanced Search
 
 

Submitters