Vapor deposition of copper(I) bromide films via a two-step conversion process
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CitationHeasley, Rachel, Christina M. Chang, Luke M. Davis, Kathy Liu, Roy G. Gordon. 2017. Vapor deposition of copper(I) bromide films via a two-step conversion process. Journal of Vacuum Science and Technology A 35, 01B109. DOI: 10.1116/1.4967726.
AbstractThin films of Cu2S grown by pulsed-chemical vapor deposition of bis(N,N'-di-secbutylacetamidinato)dicopper(I) and hydrogen sulfide were converted to CuBr upon exposure to anhydrous hydrogen bromide. X-ray diffraction shows that the as-deposited films have a polycrystalline Cu2S structure. After exposure to HBr gas, the surface of the films is transformed to a γ-CuBr polycrystalline structure. Scanning electron microscopy and X-ray photoelectron spectroscopy reveal complete conversion of up to 100 nm of film. However, when the conversion to CuBr approaches the interface between as-deposited Cu2S and the SiO2 substrate, the morphology of the film changes from continuous and nanocrystalline to sparse and microcrystalline.
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