Graphene synthesis by ion implantation

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Graphene synthesis by ion implantation

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Title: Graphene synthesis by ion implantation
Author: Garaj, Slaven; Hubbard, William; Golovchenko, Jene Andrew

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Citation: Garaj, Slaven, William Hubbard, and J. A. Golovchenko. 2010. Graphene Synthesis by Ion Implantation. Applied Physics Letters 97, no. 18: 183103. doi:10.1063/1.3507287.
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Abstract: We demonstrate an ion implantation method for large-scale synthesis of high quality graphene films with controllable thickness. Thermally annealing polycrystalline nickel substrates that have been ion implanted with carbon atoms results in the surfacegrowth of graphene films whose average thickness is controlled by implantation dose. The graphene film quality, as probed with Raman and electrical measurements, is comparable to previously reported synthesis methods. The implantation synthesis method can be generalized to a variety of metallic substrates and growth temperatures, since it does not require a decomposition of chemical precursors or a solvation of carbon into the substrate.
Published Version: doi:10.1063/1.3507287
Terms of Use: This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:29405816
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