Liquid-metal-mediated homoepitaxial film growth of Ge at low temperature

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Liquid-metal-mediated homoepitaxial film growth of Ge at low temperature

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Title: Liquid-metal-mediated homoepitaxial film growth of Ge at low temperature
Author: Xiong, Fulin; Ganz, Eric; Loeser, A. G.; Golovchenko, Jene Andrew; Spaepen, Frans A.

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Citation: Xiong, Fulin, Eric Ganz, A. G. Loeser, J. A. Golovchenko, and Frans Spaepen. 1991. Liquid-Metal-Mediated Homoepitaxial Film Growth of Ge at Low Temperature. Applied Physics Letters 59, no. 27: 3586. doi:10.1063/1.105640.
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Abstract: We demonstrate liquid‐metal‐mediatedhomoepitaxialcrystal growth of Ge on Ge(111) at temperatures in the range of 400–450 °C. Crystal growth proceeds by diffusion of Ge through a liquid layer, followed by precipitation onto the substrate by the vapor‐liquid‐solid mechanism. The liquid‐metal phase at the interface is a Au‐Ge alloy formed by initial deposition of a thin Au layer above the eutectic temperature. Ge vapor is provided by a molecular‐beam evaporator. The resulting films revealed high‐crystalline quality by in situ high‐energy ion scattering and channeling analysis and ex situ by cross‐sectional transmission electron microscopy.
Published Version: doi:10.1063/1.105640
Other Sources: http://golovchenko.physics.harvard.edu/LiquidMetalMediatedHomoepitaxial.pdf
Terms of Use: This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:29407031
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