| dc.contributor.author | Martinez, Robert | |
| dc.contributor.author | Augustyniak, Walter | |
| dc.contributor.author | Golovchenko, Jene Andrew | |
| dc.date.accessioned | 2016-11-18T16:53:27Z | |
| dc.date.issued | 1990 | |
| dc.identifier.citation | Martinez, Robert, Walter Augustyniak, and Jene Golovchenko. 1990. Direct Measurement of Crystal Surface Stress. Physical Review Letters 64, no. 9: 1035–1038. doi:10.1103/physrevlett.64.1035. | en_US |
| dc.identifier.issn | 0031-9007 | en_US |
| dc.identifier.uri | http://nrs.harvard.edu/urn-3:HUL.InstRepos:29407034 | |
| dc.description.abstract | We have measured surface stresses on clean Si(111) 7×7 by comparing this surface to a reference surface on which gallium atoms are adsorbed under UHV conditions. Stresses are determined by optically measuring the macroscopic strain induced in thin samples. We find a surface stress of 2.37 eV/(1×1 cell) for Si(111) 7×7, and a stress in the range 0.90–1.09 eV/(1×1 cell) for the Si(Ga) (111) superlattice associated with one monolayer Ga coverage. Comparison with theory suggests that our technique will be a powerful tool to measure equilibrium stresses in atomically clean surfaces. | en_US |
| dc.description.sponsorship | Physics | en_US |
| dc.language.iso | en_US | en_US |
| dc.publisher | American Physical Society (APS) | en_US |
| dc.relation.isversionof | doi:10.1103/PhysRevLett.64.1035 | en_US |
| dc.relation.hasversion | http://golovchenko.physics.harvard.edu/DirectMeasurementOfCrystalSurface.pdf | en_US |
| dash.license | LAA | |
| dc.title | Direct measurement of crystal surface stress | en_US |
| dc.type | Journal Article | en_US |
| dc.description.version | Version of Record | en_US |
| dc.relation.journal | Phys. Rev. Lett. | en_US |
| dash.depositing.author | Golovchenko, Jene Andrew | |
| dc.date.available | 2016-11-18T16:53:27Z | |
| dc.identifier.doi | 10.1103/PhysRevLett.64.1035 | * |
| dash.contributor.affiliated | Golovchenko, Jene | |
