Arsenic atom location on passivated silicon (111) surfaces

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Arsenic atom location on passivated silicon (111) surfaces

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Title: Arsenic atom location on passivated silicon (111) surfaces
Author: Patel, J. R.; Golovchenko, Jene Andrew; Freeland, P. E.; Gossmann, H- J.

Note: Order does not necessarily reflect citation order of authors.

Citation: Patel, J. R., J. A. Golovchenko, P. E. Freeland, and H- J. Gossmann. 1987. Arsenic Atom Location on Passivated Silicon (111) Surfaces. Physical Review B 36, no. 14: 7715-7718. doi:10.1103/physrevb.36.7715.
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Abstract: The position of As atoms on a clean Si(111) surface has been determined with x-ray standing waves in ultrahigh vacuum. The As atoms occupy exclusively the top half of the silicon (111) double plane and lie at 0.17 Å above the unrelaxed bulk terminated silicon (111) plane. This value is in good agreement with recent total-energy minimization calculations. A significant but limited stability of As passivated surfaces is observed upon exposure to various ambients. We also present general arguments showing how surface specificity can be achieved with x-ray standing-wave measurements such as the above, where bulk-symmetry site-occupancy rules are broken.
Published Version: doi:10.1103/PhysRevB.36.7715
Other Sources: http://golovchenko.physics.harvard.edu/ArsenicAtomLocation.pdf
Terms of Use: This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:29407038
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