Location of atoms in the first monolayer of GaAs on Si

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Location of atoms in the first monolayer of GaAs on Si

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Title: Location of atoms in the first monolayer of GaAs on Si
Author: Patel, J. R.; Freeland, P. E.; Hybertsen, M. S.; Jacobson, D. C.; Golovchenko, Jene Andrew

Note: Order does not necessarily reflect citation order of authors.

Citation: Patel, J. R., P. E. Freeland, M. S. Hybertsen, D. C. Jacobson, and J. A. Golovchenko. 1987. Location of Atoms in the First Monolayer of GaAs on Si. Physical Review Letters 59, no. 19: 2180-2183. doi:10.1103/physrevlett.59.2180.
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Abstract: The position of Ga and As atoms at monolayer coverages of heteroepitaxial GaAs on clean Si(111) have been measured by x-ray standing waves in UHV. Though both As and Ga are incident on the surface As atoms choose to occupy the upper half of the (111) double plane about 5% higher on the average, relative to the Si(111) d spacing, than the bulk silicon position. Ga atoms are exclusively located on the lower half of the (111) plane about 3% higher than the corresponding bulk positions.
Published Version: doi:10.1103/PhysRevLett.59.2180
Other Sources: http://golovchenko.physics.harvard.edu/LocationOfAtoms.pdf
Terms of Use: This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:29407039
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