New Reconstructions on Silicon (111) Surfaces

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New Reconstructions on Silicon (111) Surfaces

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Title: New Reconstructions on Silicon (111) Surfaces
Author: Becker, R. S.; Golovchenko, Jene Andrew; Higashi, G. S.; Swartzentruber, B. S.

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Citation: Becker, R. S., J. A. Golovchenko, G. S. Higashi, and B. S. Swartzentruber. 1986. New Reconstructions on Silicon (111) Surfaces. Physical Review Letters 57, no. 8: 1020-1027. doi:10.1103/physrevlett.57.1020.
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Abstract: We report the first observation of a class of new reconstructions on clean silicon (111) surfaces. The surfaces are prepared by a combination of laser and thermal annealing and the new structures are studied with a tunneling microscope. c−(4×2)and(2×2) regions populate the ordered parts of the surface directly after laser annealing. Subsequent partial thermal anneals result in a surface containing (5×5), (7×7), (9×9), and other intermediate structures. These observations' bearing on the connection between germanium and silicon reconstructions is discussed.
Published Version: doi:10.1103/PhysRevLett.57.1020
Other Sources: http://golovchenko.physics.harvard.edu/NewReconstructionOnSilicon.pdf
Terms of Use: This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:29407041
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