New Reconstructions on Silicon (111) Surfaces
Becker, R. S.
Higashi, G. S.
Swartzentruber, B. S.
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CitationBecker, R. S., J. A. Golovchenko, G. S. Higashi, and B. S. Swartzentruber. 1986. New Reconstructions on Silicon (111) Surfaces. Physical Review Letters 57, no. 8: 1020-1027. doi:10.1103/physrevlett.57.1020.
AbstractWe report the first observation of a class of new reconstructions on clean silicon (111) surfaces. The surfaces are prepared by a combination of laser and thermal annealing and the new structures are studied with a tunneling microscope. c−(4×2)and(2×2) regions populate the ordered parts of the surface directly after laser annealing. Subsequent partial thermal anneals result in a surface containing (5×5), (7×7), (9×9), and other intermediate structures. These observations' bearing on the connection between germanium and silicon reconstructions is discussed.
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