Charge state dependence of channeled ion energy loss
Goland, A. N.
Rosner, J. S.
Thorn, C. E.
Wegner, H. E.
Moak, C. D.
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CitationGolovchenko, J. A., A. N. Goland, J. S. Rosner, C. E. Thorn, H. E. Wegner, H. Knudsen, and C. D. Moak. 1981. Charge State Dependence of Channeled Ion Energy Loss. Physical Review B 23, no. 3: 957–966. doi:10.1103/physrevb.23.957.
AbstractThe charge state dependence of channeled ion energy loss has been determined for a series of ions ranging from fluorine to chlorine along the ⟨110⟩ direction in a silicon crystal. Energy losses for both bare ions and ions partially clothed with bound electrons at EA≅3 MeV/amu have been measured. The energy-loss rate for bare ions follows a strict Z21 scaling and agrees reasonably well with quantal perturbation calculations without the need for polarization or Bloch corrections. An explanation for this result is discussed. The clothed-ion energy losses appear to demonstrate screening effects that agree qualitatively with simple estimates. The angular dependence of the observed energy-loss effects is also presented.
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