Dynamics of Q-switched laser annealing

DSpace/Manakin Repository

Dynamics of Q-switched laser annealing

Citable link to this page


Title: Dynamics of Q-switched laser annealing
Author: Auston, D. H.; Golovchenko, Jene Andrew; Simons, A. L.; Surko, C. M.; Venkatesan, T. N. C.

Note: Order does not necessarily reflect citation order of authors.

Citation: Auston, D. H., J. A. Golovchenko, A. L. Simons, C. M. Surko, and T. N. C. Venkatesan. 1979. Dynamics of Q-Switched Laser Annealing. Applied Physics Letters 34, no. 11: 777. doi:10.1063/1.90670.
Full Text & Related Files:
Abstract: Using time‐resolved optical‐reflectivity measurements, the duration of the thin liquid layer accompanying Q‐switched laser annealing in Si, Ge, and GaAs has been determined. The duration of this melted layer has been studied as a function of laser energy at 1.06‐ and 0.53‐μm wavelength for both implanted and unimplanted samples. Thresholds for initiation of melting and damaging the surface are obtained directly. With the aid of channeling–Rutherford‐backscattering measurements, the duration of melt necessary for annealing implanted samples is determined. Results for unimplanted silicon at 530 nm are compared with recent numerical calculations. In addition, measuremnts of the fall time of the reflectivity as the liquid‐solid interface approaches the surface enables us to estimate regrowth velocities. A simple scheme is also discussed for efficient annealing with dual wavelengths.
Published Version: doi:10.1063/1.90670
Other Sources: http://golovchenko.physics.harvard.edu/DynamicsOfQ-SwitchedLaserAnnealing.pdf
Terms of Use: This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:29407062
Downloads of this work:

Show full Dublin Core record

This item appears in the following Collection(s)


Search DASH

Advanced Search