Annealing of Te-implanted GaAs by ruby laser irradiation

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Annealing of Te-implanted GaAs by ruby laser irradiation

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Title: Annealing of Te-implanted GaAs by ruby laser irradiation
Author: Golovchenko, Jene Andrew; Venkatesan, T. N. C.

Note: Order does not necessarily reflect citation order of authors.

Citation: Golovchenko, J. A., and T. N. C. Venkatesan. 1978. Annealing of Te-Implanted GaAs by Ruby Laser Irradiation. Applied Physics Letters 32, no. 3: 147. doi:10.1063/1.89962.
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Abstract: A single pulse of ruby laser radiation is shown to cause significant regrowth in the amorphous region of heavily ion‐implanted GaAs. The implanted Te atoms and the host material both show good channeling dips, suggesting essentially complete substitutionality of the Te. There has been only a minor redistribution of the tellurium atoms. The resulting local Te concentration in the laser‐irradiated sample is more than ten times the known maximum solubility of Te in GaAs.
Published Version: doi:10.1063/1.89962
Other Sources: http://golovchenko.physics.harvard.edu/AnnealingOfTe-implantedGaAs.pdf
Terms of Use: This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:29407065
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