Annealing of Te-implanted GaAs by ruby laser irradiation
Venkatesan, T. N. C.
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CitationGolovchenko, J. A., and T. N. C. Venkatesan. 1978. Annealing of Te-Implanted GaAs by Ruby Laser Irradiation. Applied Physics Letters 32, no. 3: 147. doi:10.1063/1.89962.
AbstractA single pulse of ruby laser radiation is shown to cause significant regrowth in the amorphous region of heavily ion‐implanted GaAs. The implanted Te atoms and the host material both show good channeling dips, suggesting essentially complete substitutionality of the Te. There has been only a minor redistribution of the tellurium atoms. The resulting local Te concentration in the laser‐irradiated sample is more than ten times the known maximum solubility of Te in GaAs.
Citable link to this pagehttp://nrs.harvard.edu/urn-3:HUL.InstRepos:29407065
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