Vapor Deposition of Copper-Manganese Interconnects

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Vapor Deposition of Copper-Manganese Interconnects

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Title: Vapor Deposition of Copper-Manganese Interconnects
Author: Gordon, Roy Gerald; Feng, Jun; Li, Kecheng; Gong, Xian

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Citation: Gordon, Roy G.; Feng, Jun; Li, Kecheng; Gong, Xian. 2016. Vapor Deposition of Copper-Manganese Interconnects. In Proceedings of IEEE International Interconnect Technology Conference/Advanced Metallization Conference (IITC/AMC), San Jose, CA, May 23-26, 2016.
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Abstract: Chemical vapor deposition (CVD) of copper and manganese can produce interconnects scaled down to below 10 nm, while enhancing their conductivity and lifetime. CVD using similar super-conformal processes can enable very narrow through-silicon-vias, as well as tiny and robust flexible wires between chips. Silica insulating layers can be made by a super-conformal and rapid atomic layer deposition (ALD) process.
Published Version: 10.1109/iitc-amc.2016.7507723
Terms of Use: This article is made available under the terms and conditions applicable to Open Access Policy Articles, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#OAP
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:30353762
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