Vapor Deposition of Copper-Manganese Interconnects
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CitationGordon, Roy G.; Feng, Jun; Li, Kecheng; Gong, Xian. 2016. Vapor Deposition of Copper-Manganese Interconnects. In Proceedings of IEEE International Interconnect Technology Conference/Advanced Metallization Conference (IITC/AMC), San Jose, CA, May 23-26, 2016.
AbstractChemical vapor deposition (CVD) of copper and manganese can produce interconnects scaled down to below 10 nm, while enhancing their conductivity and lifetime. CVD using similar super-conformal processes can enable very narrow through-silicon-vias, as well as tiny and robust flexible wires between chips. Silica insulating layers can be made by a super-conformal and rapid atomic layer deposition (ALD) process.
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