Narrow-Linewidth Homogeneous Optical Emitters in Diamond Nanostructures via Silicon Ion Implantation
MetadataShow full item record
CitationEvans, Ruffin E., Alp Sipahigil, Denis D. Sukachev, Alexander S. Zibrov, and Mikhail D. Lukin. 2016. “Narrow-Linewidth Homogeneous Optical Emitters in Diamond Nanostructures via Silicon Ion Implantation.” Physical Review Applied 5 (4) (April 18). doi:10.1103/physrevapplied.5.044010.
AbstractThe negatively-charged silicon-vacancy (SiV−) center in diamond is a bright source of indistinguishable single photons and a useful resource in quantum information protocols. Until now, SiV− centers with narrow optical linewidths and small inhomogeneous distributions of SiV− transition frequencies have only been reported in samples doped with silicon during diamond growth. We present a technique for producing implanted SiV− centers with nearly lifetime-limited optical linewidths and a small inhomogeneous distribution. These properties persist after nanofabrication, paving the way for incorporation of high-quality SiV− centers into nanophotonic devices.
Citable link to this pagehttp://nrs.harvard.edu/urn-3:HUL.InstRepos:30403717
- FAS Scholarly Articles